Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides
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Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors | ACS Nano
Laser‐assisted modifications and growth of TMD crystals. a) A schematic... | Download Scientific Diagram
XT3S 250 TMD 250-2500 4p F F InN=100%
Electrical properties of the TMD inverter. (a) Voltage transfer... | Download Scientific Diagram
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits - Nanoscale (RSC Publishing) DOI:10.1039/C9NR03441B
Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides | npj 2D Materials and Applications
High-gain monolithic 3D CMOS inverter using layered semiconductors: Applied Physics Letters: Vol 111, No 22
Photodoping in 2-D materials for fabrication of logic devices
Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides
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Graphene/TMD heterostructure device. (a) A schematic illustration of a... | Download Scientific Diagram
Low-power TMD CMOS a, Schematic of the device structure. b, Transfer... | Download Scientific Diagram
Electrical properties of the TMD inverter. (a) Voltage transfer... | Download Scientific Diagram
CMOS inverter based on n-type MoS 2 and p-type WSe 2 FETs. a Schematic... | Download Scientific Diagram
Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges - Chemical Society Reviews (RSC Publishing) DOI:10.1039/C5CS00507H